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M65KG512AB6W9 - 512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM

M65KG512AB6W9_4320741.PDF Datasheet


 Full text search : 512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM


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64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
Samsung Electronic
SAMSUNG[Samsung semiconductor]
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Winbond Electronics Corp
WINBOND[Winbond]
K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
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W9864G6 W9864G6DB W9864G6DB-7 1M x 4 BANKS x 16 BITS SDRAM
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M65KG512AB6W9 intersil M65KG512AB6W9 Driver M65KG512AB6W9 integrated gigabit M65KG512AB6W9 receiver M65KG512AB6W9 npn
 

 

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